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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts
Features
* * * * * * * * * *
Low ON Resistance Low Gate Charge Zener Diode-protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb-Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts
Rating Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Gate-to-Source Voltage Single Pulse Avalanche Energy, L = 6.0 mH, ID = 10 A ESD (HBM) (JESD 22-114-B) RMS Isolation Voltage (t = 0.3 sec., R.H. 30%, TA = 25C) (Figure 13) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063 (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS 36 30 300 NDF10N60Z NDP10N60Z Unit V A A A 125 W V mJ
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VDSS 600 V RDS(ON) (TYP) @ 5 A 0.65
Applications
N-Channel D (2)
ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)
600 (Note 1) 10 (Note 2) 5.7 (Note 2) 36 (Note 2) G (1)
TO-220FP CASE 221D STYLE 1
S (3)
MARKING DIAGRAM
Vesd VISO 4500
3900
V V TO-220AB CASE 221A STYLE 5
NDF10N60ZG or NDP10N60ZG AYWW Gate Source
dv/dt IS TL
4.5 (Note 3) 10 300 260
V/ns A C
Drain A Y WW G = Location Code = Year = Work Week = Pb-Free Package
TPKG
TJ, Tstg
-55 to 150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq. pad size, 1 oz cu 2. Limited by maximum junction temperature 3. IS 10 A, di/dt 200 A/ms, VDD = 80% BVDSS
ORDERING INFORMATION
Device NDF10N60ZG NDP10N60ZG Package TO-220FP TO-220AB Shipping 50 Units/Rail In Development
(c) Semiconductor Components Industries, LLC, 2009
May, 2009 - Rev. 1
1
Publication Order Number: NDF10N60Z/D
NDF10N60Z, NDP10N60Z
THERMAL RESISTANCE
Parameter Junction-to-Case (Drain) Junction-to-Ambient Steady State (Note 4) Symbol RqJC RqJA NDF10N60Z 3.4 50 NDP10N60Z 1.0 50 Unit C/W
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-to-Source Leakage Current VGS = 0 V, ID = 1 mA Reference to 25C, ID = 1 mA VDS = 600 V, VGS = 0 V VGS = 20 V VGS = 10 V, ID = 5.0 A VDS = VGS, ID = 250 mA VDS = 15 V, ID = 10 A 25C 150C IGSS RDS(on) VGS(th) gFS Ciss Coss Crss VDD = 300 V, ID = 10 A, VGS = 10 V Qg Qgs Qgd Rg td(on) VDD = 300 V, ID = 10 A, VGS = 10 V, RG = 5 tr td(off) tf 3.0 7.9 1425 150 35 47 9.0 26 1.5 15 31 40 23 W ns nC 0.65 BVDSS DBVDSS/ DTJ IDSS 600 0.6 1 50 10 0.75 4.5 mA W V S pF V V/C mA Test Conditions Symbol Min Typ Max Unit
Gate-to-Source Forward Leakage ON CHARACTERISTICS (Note 5) Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Resistance RESISTIVE SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
SOURCE-DRAIN DIODE CHARACTERISTICS (TC = 25C unless otherwise noted) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 4. Insertion mounted 5. Pulse Width 380 ms, Duty Cycle 2%. IS = 10 A, VGS = 0 V VGS = 0 V, VDD = 30 V IS = 10 A, di/dt = 100 A/ms VSD trr Qrr 395 3.0 1.6 V ns mC
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2
NDF10N60Z, NDP10N60Z
TYPICAL CHARACTERISTICS
20 18 ID, DRAIN CURRENT (A) 16 14 12 10 8 6 4 2 0 TJ = 25C 7.0 V 10 V VGS = 15 V ID, DRAIN CURRENT (A) 6.6 V 6.4 V 6.2 V 6.0 V 5.8 V 5.6 V 5.4 V 5.0 V 0 4 8 12 16 20 24 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 20 18 16 14 12 10 8 6 4 2 0 TJ = -55C 2 3 4 5 6 7 8 TJ = 150C VDS = 30 V TJ = 25C
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.80 TJ = 25C 0.75 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.80
Figure 2. Transfer Characteristics
TJ = 25C 0.75
VGS = 10 V
0.70 ID = 5 A
0.70
0.65
0.65
0.60
5
6
7
8
9
10
0.60
2.5
5.0
7.5
10
12.5
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On-Resistance vs. Gate Voltage
2.7 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS = 10 V 2.2 1.7 1.2 0.7 0.2 -50 10 IDSS, LEAKAGE (nA) ID = 5 A 10,000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
TJ = 150C
1000
100
TJ = 100C
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
600
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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3
NDF10N60Z, NDP10N60Z
TYPICAL CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (V) 3500 3000 C, CAPACITANCE (pF) 2500 2000 1500 1000 500 0 0 Crss Coss 25 50 75 100 125 150 175 Ciss VGS = 0 V TJ = 25C 20 ID = 10 A TJ = 25C 300 VDS QT Qgs 5 Qgd 200 VGS 400 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
15
10
100
200
0
0
5
10
15
20
25
30
35
40
45
50
0 55
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000 10 IS, SOURCE CURRENT (A) 8 6 4 2 0
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C
VDD = 300 V ID = 10 A VGS = 10 V td(off)
t, TIME (ns)
100
tr tf td(on)
10
1
10 RG, GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
100 VGS = 10 V Single Pulse TC = 25C 1 ms 100 ms
Figure 10. Diode Source Current vs. Forward Voltage
ID, DRAIN CURRENT (A)
10
10 ms
1 10 ms 0.1 Mounted on 2 sq. FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided) with one die operating 1000
0.01
RDS(on) Limit Thermal Limit Package Limit 1 10 100
dc
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased Safe Operating Area for NDF10N60Z
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4
NDF10N60Z, NDP10N60Z
TYPICAL CHARACTERISTICS
10 Duty Cycle = 50% 1 20% 10% 5% 0.1 2% 1%
R(t) (C/W)
0.01 Single Pulse Simulation 0.001 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) 0.1 1 10 100 1000
Figure 12. Thermal Impedance for NDF10N60Z
LEADS
HEATSINK 0.110 MIN
Figure 13. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
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5
NDF10N60Z, NDP10N60Z
PACKAGE DIMENSIONS
TO-220FP CASE 221D-03 ISSUE K
-T- F Q A
123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88
-B- U
C S
H K
-Y-
G N L D
3 PL M
J R
DIM A B C D F G H J K L N Q R S U
0.25 (0.010)
B
M
Y
STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE
TO-220AB CASE 221A-09 ISSUE AE
-T- B
4 SEATING PLANE
F
T
C S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
Q
123
A U K
H Z L V G D N
R J
STYLE 5: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NDF10N60Z/D

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